Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW12NK60Z
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RFQ
2,149
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 10A TO-247 SuperMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 150W (Tc) N-Channel - 600V 10A (Tc) 640 mOhm @ 5A, 10V 4.5V @ 100µA 59nC @ 10V 1740pF @ 25V 10V ±30V
STW5NK100Z
Per Unit
$3.15
RFQ
3,954
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STMicroelectronics MOSFET N-CH 1000V 3.5A TO-247 SuperMESH3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 125W (Tc) N-Channel - 1000V 3.5A (Tc) 3.7 Ohm @ 1.75A, 10V 4.5V @ 100µA 59nC @ 10V 1154pF @ 25V 10V ±30V
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