Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW19NM65N
GET PRICE
RFQ
2,564
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 650V 15.5A TO-247 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) N-Channel - 650V 15.5A (Tc) 270 mOhm @ 7.75A, 10V 4V @ 250µA 55nC @ 10V 1900pF @ 50V 10V ±25V
STW42N60M2-EP
Per Unit
$9.83
RFQ
2,882
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 34A EP TO247 MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 250W (Tc) N-Channel - 600V 34A (Tc) 87 mOhm @ 17A, 10V 4.75V @ 250µA 55nC @ 10V 2370pF @ 100V 10V ±25V
Page 1 / 1