Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF640
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RFQ
3,607
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STMicroelectronics MOSFET N-CH 200V 18A TO-220 MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel - 200V 18A (Tc) 180 mOhm @ 9A, 10V 4V @ 250µA 72nC @ 10V 1560pF @ 25V 10V ±20V
IRF640FP
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RFQ
1,588
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STMicroelectronics MOSFET N-CH 200V 18A TO-220FP MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 40W (Tc) N-Channel - 200V 18A (Tc) 180 mOhm @ 9A, 10V 4V @ 250µA 72nC @ 10V 1560pF @ 25V 10V ±20V
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