Package / Case :
Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STE110NS20FD
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RFQ
2,584
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STMicroelectronics MOSFET N-CH 200V 110A ISOTOP MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Chassis Mount ISOTOP ISOTOP® 500W (Tc) N-Channel - 200V 110A (Tc) 24 mOhm @ 50A, 10V 4V @ 250µA 504nC @ 10V 7900pF @ 25V 10V ±20V
STY100NS20FD
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RFQ
651
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STMicroelectronics MOSFET N-CH 200V 100A MAX247 MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 MAX247™ 450W (Tc) N-Channel - 200V 100A (Tc) 24 mOhm @ 50A, 10V 4V @ 250µA 360nC @ 10V 7900pF @ 25V 10V ±20V
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