Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF830
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RFQ
1,257
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STMicroelectronics MOSFET N-CH 500V 4.5A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 500V 4.5A (Tc) 1.5 Ohm @ 2.7A, 10V 4V @ 250µA 30nC @ 10V 610pF @ 25V 10V ±20V
STP4NB50
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RFQ
3,233
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STMicroelectronics MOSFET N-CH 500V 3.8A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel - 500V 3.8A (Tc) 2.8 Ohm @ 1.9A, 10V 4V @ 250µA 21nC @ 10V 400pF @ 25V 10V ±30V
STP3NB100
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RFQ
3,951
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STMicroelectronics MOSFET N-CH 1KV 3A TO-220 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 1000V 3A (Tc) 6 Ohm @ 1.5A, 10V 4V @ 250µA 30nC @ 10V 700pF @ 25V 10V ±30V
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