- Packaging :
- Operating Temperature :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,331
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STMicroelectronics | MOSFET N-CH 650V 4.3A 8POWERFLAT | MDmesh™ V | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-PowerFlat™ HV | PowerFlat™ (8x8) HV | 2.8W (Ta), 189W (Tc) | N-Channel | - | 650V | 4.3A (Ta), 22.5A (Tc) | 69 mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | 4200pF @ 100V | 10V | ±25V | ||
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2,298
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STMicroelectronics | MOSFET N-CH 650V 4.3A 8POWERFLAT | MDmesh™ V | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-PowerFlat™ HV | PowerFlat™ (8x8) HV | 2.8W (Ta), 189W (Tc) | N-Channel | - | 650V | 4.3A (Ta), 22.5A (Tc) | 69 mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | 4200pF @ 100V | 10V | ±25V | |||
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2,053
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STMicroelectronics | MOSFET N-CH 650V 4.3A 8POWERFLAT | MDmesh™ V | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerFlat™ HV | PowerFlat™ (8x8) HV | 2.8W (Ta), 189W (Tc) | N-Channel | - | 650V | 4.3A (Ta), 22.5A (Tc) | 69 mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | 4200pF @ 100V | 10V | ±25V |
