Supplier Device Package :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW6N120K3
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RFQ
2,864
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STMicroelectronics MOSFET N-CH 1200V 6A TO-247 SuperMESH3™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 150W (Tc) N-Channel - 1200V 6A (Tc) 2.4 Ohm @ 2.5A, 10V 5V @ 100µA 34nC @ 10V 1050pF @ 100V 10V ±30V
STP6N120K3
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RFQ
2,830
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STMicroelectronics MOSFET N-CH 1200V 6A TO-220 SuperMESH3™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel - 1200V 6A (Tc) 2.4 Ohm @ 2.5A, 10V 5V @ 100µA 34nC @ 10V 1050pF @ 100V 10V ±30V
STFW6N120K3
Per Unit
$7.39
RFQ
1,263
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STMicroelectronics MOSFET N-CH 1200V 3.8A TO-3PF SuperMESH3™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 63W (Tc) N-Channel - 1200V 6A (Tc) 2.4 Ohm @ 2.5A, 10V 5V @ 100µA 34nC @ 10V 1050pF @ 100V 10V ±30V
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