- Series :
- Packaging :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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715
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STMicroelectronics | MOSFET N-CH 650V 2.3A POWERFLAT | MDmesh™ M2 | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 22W (Tc) | N-Channel | - | 650V | 2.3A (Tc) | 1.8 Ohm @ 1A, 10V | 4V @ 250µA | 5nC @ 10V | 155pF @ 100V | 10V | ±25V | ||||
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1,273
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STMicroelectronics | MOSFET N-CH 600V 0.65A POWERFLAT | MDmesh™ II | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 2W (Ta), 22W (Tc) | N-Channel | - | 600V | 650mA (Ta), 2.2A (Tc) | 1.8 Ohm @ 1A, 10V | 4V @ 250µA | 9.5nC @ 10V | 188pF @ 50V | 10V | ±25V | |||
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3,290
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STMicroelectronics | MOSFET N-CH 600V 0.65A POWERFLAT | MDmesh™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 2W (Ta), 22W (Tc) | N-Channel | - | 600V | 650mA (Ta), 2.2A (Tc) | 1.8 Ohm @ 1A, 10V | 4V @ 250µA | 9.5nC @ 10V | 188pF @ 50V | 10V | ±25V | ||||
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2,048
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STMicroelectronics | MOSFET N-CH 600V 0.65A POWERFLAT | MDmesh™ II | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 2W (Ta), 22W (Tc) | N-Channel | - | 600V | 650mA (Ta), 2.2A (Tc) | 1.8 Ohm @ 1A, 10V | 4V @ 250µA | 9.5nC @ 10V | 188pF @ 50V | 10V | ±25V |