Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STQ3NK50ZR-AP
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RFQ
3,400
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 500V 500MA TO-92 SuperMESH™ Obsolete Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3W (Tc) N-Channel - 500V 500mA (Tc) 3.3 Ohm @ 1.15A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
STQ2HNK60ZR-AP
Per Unit
$0.87
RFQ
2,954
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STMicroelectronics MOSFET N-CH 600V 0.5A TO-92 SuperMESH™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3W (Tc) N-Channel - 600V 500mA (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
STQ2HNK60ZR-AP
Per Unit
$0.30
RFQ
757
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 0.5A TO-92 SuperMESH™ Active Tape & Box (TB) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3W (Tc) N-Channel - 600V 500mA (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
STQ1NC45R-AP
Per Unit
$0.20
RFQ
3,534
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 450V 0.5A TO-92 SuperMESH™ Active Tape & Box (TB) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92-3 3.1W (Tc) N-Channel - 450V 500mA (Tc) 4.5 Ohm @ 500mA, 10V 3.7V @ 250µA 7nC @ 10V 160pF @ 25V 10V ±30V
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