Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STD50N03L-1
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RFQ
2,533
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STMicroelectronics MOSFET N-CH 30V 40A IPAK STripFET™ III Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 30V 40A (Tc) 10.5 mOhm @ 20A, 10V 1V @ 250µA 14nC @ 5V 1434pF @ 25V 5V, 10V ±20V
STU40N2LH5
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RFQ
1,559
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STMicroelectronics MOSFET N-CH 25V 40A IPAK STripFET™ V Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 35W (Tc) N-Channel - 25V 40A (Tc) 12.4 mOhm @ 20A, 10V 1V @ 250µA 6.3nC @ 5V 700pF @ 20V 5V, 10V ±22V
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