- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,830
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STMicroelectronics | MOSFET N-CH 1200V 6A TO-220 | SuperMESH3™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 150W (Tc) | N-Channel | - | 1200V | 6A (Tc) | 2.4 Ohm @ 2.5A, 10V | 5V @ 100µA | 34nC @ 10V | 1050pF @ 100V | 10V | ±30V | |||
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1,721
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STMicroelectronics | MOSFET N-CH 1200V 4.4A TO-220 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 160W (Tc) | N-Channel | - | 1200V | 4.7A (Tc) | 3.5 Ohm @ 2.3A, 10V | 5V @ 100µA | 55nC @ 10V | 120pF @ 25V | 10V | ±30V | |||
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1,439
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STMicroelectronics | MOSFET N-CH 1200V 12A TO220 | MDmesh™ K5 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 250W (Tc) | N-Channel | - | 1200V | 12A (Tc) | 690 mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | 1370pF @ 100V | 10V | ±30V |