Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STW26NM60
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RFQ
3,352
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STMicroelectronics MOSFET N-CH 600V 30A TO-247 MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 313W (Tc) N-Channel - 600V 30A (Tc) 135 mOhm @ 13A, 10V 5V @ 250µA 102nC @ 10V 2900pF @ 25V 10V ±30V
STW26NM50
Per Unit
$10.87
RFQ
2,221
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STMicroelectronics MOSFET N-CH 500V 30A TO-247 MDmesh™ Not For New Designs Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 313W (Tc) N-Channel - 500V 30A (Tc) 120 mOhm @ 13A, 10V 5V @ 250µA 106nC @ 10V 3000pF @ 25V 10V ±30V
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