- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,901
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STMicroelectronics | MOSFET N-CH 500V 34A MAX247 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | MAX247™ | 450W (Tc) | N-Channel | - | 500V | 34A (Tc) | 130 mOhm @ 17A, 10V | 5V @ 250µA | 223nC @ 10V | 9100pF @ 25V | 10V | ±30V | ||
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907
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STMicroelectronics | MOSFET N-CH 200V 34A TO-247 | PowerMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 180W (Tc) | N-Channel | - | 200V | 34A (Tc) | 75 mOhm @ 17A, 10V | 5V @ 250µA | 80nC @ 10V | 3300pF @ 25V | 10V | ±30V | ||
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3,586
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STMicroelectronics | MOSFET N-CH 600V 34A I2PAKFP | MDmesh™ II Plus | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 40W (Tc) | N-Channel | - | 600V | 34A (Tc) | 88 mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | 2500pF @ 100V | 10V | ±25V |