- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,618
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N CH 650V 18A I2PAKFP | MDmesh™ V | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 130W (Tc) | N-Channel | - | 650V | 18A (Tc) | 190 mOhm @ 9A, 10V | 5V @ 250µA | 45nC @ 10V | 1345pF @ 100V | 10V | ±25V | |||
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2,021
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N CH 600V 18A TO281 | MDmesh™ II Plus | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 30W (Tc) | N-Channel | - | 600V | 18A (Tc) | 190 mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | 1060pF @ 100V | 10V | ±25V |
