- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,240
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STMicroelectronics | MOSFET N-CH 800V 4A I2PAKFP | MDmesh™ K5 | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 20W (Tc) | N-Channel | - | 800V | 4A (Tc) | 1.75 Ohm @ 2A, 10V | 5V @ 100µA | 5.5nC @ 10V | 177pF @ 100V | 10V | ±30V | ||
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2,227
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STMicroelectronics | MOSFET N-CH 800V 8A I2PAKFP | MDmesh™ K5 | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 20W (Tc) | N-Channel | - | 800V | 8A (Tc) | 630 mOhm @ 4A, 10V | 5V @ 100µA | 15nC @ 10V | 427pF @ 100V | 10V | ±30V | ||
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2,358
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STMicroelectronics | MOSFET N-CH 525V 4A I2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 20W (Tc) | N-Channel | - | 525V | 4A (Tc) | 2.6 Ohm @ 2.2A, 10V | 4.5V @ 50µA | 12nC @ 10V | 340pF @ 100V | 10V | ±30V | |||
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2,999
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STMicroelectronics | MOSFET N-CH 600V 5.5A TO-220FP | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I2PAKFP (TO-281) | 20W (Tc) | N-Channel | - | 600V | 5.5A (Tc) | 780 mOhm @ 3A, 10V | 4V @ 250µA | 10nC @ 10V | 320pF @ 100V | 10V | ±25V |