- Operating Temperature :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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708
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N-CH 600V 11A IPAK | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 90W (Tc) | N-Channel | - | 600V | 11A (Tc) | 360 mOhm @ 5.5A, 10V | 4V @ 250µA | 27nC @ 10V | 790pF @ 50V | 10V | ±25V | |||
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2,543
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N-CH 650V 11A IPAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 650V | 11A (Tc) | 360 mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5nC @ 10V | 718pF @ 100V | 10V | ±25V | |||
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2,647
Ships today + free overnight shipping
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STMicroelectronics | MOSFET N-CH 600V 11A IPAK | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 110W (Tc) | N-Channel | - | 600V | 11A (Tc) | 380 mOhm @ 5.5A, 10V | 4V @ 250µA | 17nC @ 10V | 580pF @ 100V | 10V | ±25V |
