Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STU7LN80K5
Per Unit
$1.80
RFQ
1,424
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 800V 5A IPAK MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 85W (Tc) N-Channel - 800V 5A (Tc) 1.15 Ohm @ 2.5A, 10V 5V @ 100µA 12nC @ 10V 270pF @ 100V 10V ±30V
STU9N65M2
Per Unit
$1.73
RFQ
766
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 650V 5A IPAK MDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 60W (Tc) N-Channel - 650V 5A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 10nC @ 10V 315pF @ 100V 10V ±25V
STU7N65M2
Per Unit
$1.65
RFQ
3,657
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 650V 5A IPAK MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 60W (Tc) N-Channel - 650V 5A (Tc) 1.15 Ohm @ 2.5A, 10V 4V @ 250µA 9nC @ 10V 270pF @ 100V 10V ±25V
STU6N65M2
Per Unit
$1.53
RFQ
3,970
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 650V 4A IPAK MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 60W (Tc) N-Channel - 650V 4A (Tc) 1.35 Ohm @ 2A, 10V 4V @ 250µA 9.8nC @ 10V 226pF @ 100V 10V ±25V
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