Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STB13NM50N-1
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RFQ
2,732
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STMicroelectronics MOSFET N-CH 500V 12A I2PAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 100W (Tc) N-Channel - 500V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 30nC @ 10V 960pF @ 50V 10V ±25V
STI14NM50N
Per Unit
$3.33
RFQ
3,708
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STMicroelectronics MOSFET N CH 500V 12A I2PAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 90W (Tc) N-Channel - 500V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 100µA 27nC @ 10V 816pF @ 50V 10V ±25V
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