Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STB11NM60-1
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RFQ
2,166
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 650V 11A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 160W (Tc) N-Channel - 650V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V 1000pF @ 25V 10V ±30V
STB20NM50-1
Per Unit
$4.63
RFQ
2,363
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 550V 20A I2PAK MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 192W (Tc) N-Channel - 550V 20A (Tc) 250 mOhm @ 10A, 10V 5V @ 250µA 56nC @ 10V 1480pF @ 25V 10V ±30V
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