Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STF7NM60N
Per Unit
$1.26
RFQ
3,010
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 600V 4.7A TO-220FP MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-5 Full Pack TO-220FP 20W (Tc) N-Channel - 600V 5A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 14nC @ 10V 363pF @ 50V 10V ±25V
STFU9N65M2
Per Unit
$0.75
RFQ
1,776
Ships today + free overnight shipping
STMicroelectronics MOSFET MDmesh™ M2 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 20W (Tc) N-Channel - 650V 5A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 10nC @ 10V 315pF @ 100V 10V ±25V
STF9N65M2
Per Unit
$1.75
RFQ
2,448
Ships today + free overnight shipping
STMicroelectronics MOSFET N-CH 650V 5A TO-220FP MDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 20W (Tc) N-Channel - 650V 5A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 10nC @ 10V 315pF @ 100V 10V ±25V
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