- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GET PRICE |
858
Ships today + free overnight shipping
|
Renesas Electronics America | MOSFET 3N/3P-CH 60V 20A HSOP | Automotive, AEC-Q101 | Active | Tray | 175°C | Surface Mount | 20-SOIC (0.433", 11.00mm Width) Exposed Pad | 54W | 20-HSOP | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate, 4.5V Drive | 60V | 20A | 20 mOhm @ 10A, 10V | 2.5V @ 1mA | 43nC @ 10V | 2600pF @ 10V | ||
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2,191
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EPC | TRANS GAN 2N-CH 60V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
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GET PRICE |
1,715
Ships today + free overnight shipping
|
EPC | TRANS GAN 2N-CH 60V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5 mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V |
