- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
14 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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3,618
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ON Semiconductor | MOSFET 2N-CH 20V 2.7A SSOT6 | PowerTrench® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 700mW | SuperSOT™-6 | 2 N-Channel (Dual) | Standard | 20V | 2.7A | 80 mOhm @ 2.7A, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 310pF @ 10V | ||
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2,686
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ON Semiconductor | MOSFET 2N-CH 20V 2.7A SSOT6 | PowerTrench® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 700mW | SuperSOT™-6 | 2 N-Channel (Dual) | Standard | 20V | 2.7A | 80 mOhm @ 2.7A, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 310pF @ 10V | |||
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3,144
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ON Semiconductor | MOSFET 2N-CH 20V 2.7A SSOT6 | PowerTrench® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 700mW | SuperSOT™-6 | 2 N-Channel (Dual) | Standard | 20V | 2.7A | 80 mOhm @ 2.7A, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | 310pF @ 10V | |||
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2,404
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Diodes Incorporated | MOSFET 2P-CH 20V 3A 9UWLB | - | Obsolete | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, WLBGA | 800mW | U-WLB1515-9 | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 3A | 100 mOhm @ 1A, 4.5V | 900mV @ 250µA | 4.2nC @ 4.5V | 310pF @ 10V | ||
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2,470
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Diodes Incorporated | MOSFET 2P-CH 20V 3A 9UWLB | - | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, WLBGA | 800mW | U-WLB1515-9 | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 3A | 100 mOhm @ 1A, 4.5V | 900mV @ 250µA | 4.2nC @ 4.5V | 310pF @ 10V | ||
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3,948
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|
Diodes Incorporated | MOSFET 2P-CH 20V 3A 9UWLB | - | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 9-UFBGA, WLBGA | 800mW | U-WLB1515-9 | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 3A | 100 mOhm @ 1A, 4.5V | 900mV @ 250µA | 4.2nC @ 4.5V | 310pF @ 10V | ||
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867
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Infineon Technologies | MOSFET 2N-CH 20V 4.5A PQFN | HEXFET® | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-VQFN | 1.5W | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | ||
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1,497
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Infineon Technologies | MOSFET 2N-CH 20V 4.5A PQFN | HEXFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VQFN | 1.5W | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | |||
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1,708
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Infineon Technologies | MOSFET 2N-CH 20V 4.5A PQFN | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-VQFN | 1.5W | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | |||
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3,280
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Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-µDFN(2x2) | 2 N-Channel (Dual) | Standard | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | |||
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2,169
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Infineon Technologies | MOSFET 2N-CH 20V 4.5A PQFN | HEXFET® | Obsolete | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 1.5W | 6-PQFN Dual (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | ||
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1,298
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Infineon Technologies | MOSFET 2N-CH 20V 4.5A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 1.5W | 6-PQFN Dual (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 45 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | 310pF @ 10V | ||
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GET PRICE |
2,281
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Digi-Reel® | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-µDFN(2x2) | 2 N-Channel (Dual) | Standard | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | ||
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930
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-µDFN(2x2) | 2 N-Channel (Dual) | Standard | 30V | 4A | 46 mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V |
