Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
TPC8221-H,LQ(S
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RFQ
1,619
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 6A 8SOP - Obsolete Tape & Reel (TR) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 450mW 8-SOP 2 N-Channel (Dual) Standard 30V 6A 25 mOhm @ 3A, 10V 2.3V @ 100µA 12nC @ 10V 830pF @ 10V
TPC8408,LQ(S
Per Unit
$0.53
RFQ
2,166
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N/P-CH 40V 6.1A/5.3A 8SOP - Active Tape & Reel (TR) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 450mW 8-SOP N and P-Channel Logic Level Gate 40V 6.1A, 5.3A 32 mOhm @ 3.1A, 10V 2.3V @ 100µA 24nC @ 10V 850pF @ 10V
TPC8407,LQ(S
Per Unit
$0.45
RFQ
1,988
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET N/P-CH 30V 9A/7.4A 8SOP - Active Tape & Reel (TR) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 450mW 8-SOP N and P-Channel Logic Level Gate 30V 9A, 7.4A 17 mOhm @ 4.5A, 10V 2.3V @ 100µA 17nC @ 10V 1190pF @ 10V
TPC8223-H,LQ(S
Per Unit
$0.45
RFQ
2,830
Ships today + free overnight shipping
Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 9A 8SOP - Active Tape & Reel (TR) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 450mW 8-SOP 2 N-Channel (Dual) Logic Level Gate 30V 9A 17 mOhm @ 4.5A, 10V 2.3V @ 100µA 17nC @ 10V 1190pF @ 10V
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