- Manufacture :
- Series :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GET PRICE |
2,179
Ships today + free overnight shipping
|
Infineon Technologies | MOSFET N/P-CH 55V 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | N and P-Channel | Standard | 55V | 4.7A, 3.4A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | ||
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GET PRICE |
2,746
Ships today + free overnight shipping
|
Diodes Incorporated | MOSFET N/P-CH 30V 8-SOIC | - | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.8W | 8-SO | N and P-Channel | Logic Level Gate | 30V | 5.8A, 4.8A | 25 mOhm @ 5.8A, 10V | 1V @ 250µA (Min) | 36nC @ 10V | 1800pF @ 25V |
