- Manufacture :
- Series :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GET PRICE |
3,017
Ships today + free overnight shipping
|
NXP USA Inc. | MOSFET 2N-CH 30V 8SOIC | TrenchMOS™ | Obsolete | Tape & Reel (TR) | -65°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | - | 100 mOhm @ 2.2A, 10V | 2.8V @ 1mA | 6nC @ 10V | 250pF @ 20V | ||
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GET PRICE |
899
Ships today + free overnight shipping
|
ON Semiconductor | MOSFET N/P-CH 30V 8SOIC | - | Obsolete | Tape & Reel (TR) | -65°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2W | 8-SOIC | N and P-Channel | Logic Level Gate | 30V | 2.2A, 1.8A | 90 mOhm @ 3A, 10V | 2.2V @ 250µA | 5nC @ 4.5V | 300pF @ 20V |
