Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Per Unit
$13.59
RFQ
955
Ships today + free overnight shipping
IXYS MOSFET 2N-CH 200V 33A I4-PAC HiPerFET™ Active Tube -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 125W ISOPLUS i4-PAC™ 2 N-Channel (Dual) Standard 200V 33A 40 mOhm @ 30A, 10V 4.5V @ 250µA 90nC @ 10V 3700pF @ 25V
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Per Unit
$13.59
RFQ
3,150
Ships today + free overnight shipping
IXYS MOSFET 2N-CH 250V 30A I4-PAC HiPerFET™ Active Tube -55°C ~ 150°C (TJ) Through Hole i4-Pac™-5 125W ISOPLUS i4-PAC™ 2 N-Channel (Dual) Standard 250V 30A 50 mOhm @ 25A, 10V 4.5V @ 250µA 78nC @ 10V 4000pF @ 25V
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