Power - Max :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI5904DC-T1-E3
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RFQ
3,602
Ships today + free overnight shipping
Vishay Siliconix MOSFET 2N-CH 20V 3.1A 1206-8 TrenchFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1.1W 1206-8 ChipFET™ 2 N-Channel (Dual) Logic Level Gate 20V 3.1A 75 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 6nC @ 4.5V -
SI6954ADQ-T1-E3
Per Unit
$0.85
RFQ
3,373
Ships today + free overnight shipping
Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP (0.173", 4.40mm Width) 830mW 8-TSSOP 2 N-Channel (Dual) Logic Level Gate 30V 3.1A 53 mOhm @ 3.4A, 10V 1V @ 250µA (Min) 16nC @ 10V -
SI5904DC-T1-GE3
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RFQ
2,550
Ships today + free overnight shipping
Vishay Siliconix MOSFET 2N-CH 20V 3.1A 1206-8 TrenchFET® Obsolete Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-SMD, Flat Lead 1.1W 1206-8 ChipFET™ 2 N-Channel (Dual) Logic Level Gate 20V 3.1A 75 mOhm @ 3.1A, 4.5V 1.5V @ 250µA 6nC @ 4.5V -
SI6954ADQ-T1-GE3
Per Unit
$0.85
RFQ
2,316
Ships today + free overnight shipping
Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP TrenchFET® Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-TSSOP (0.173", 4.40mm Width) 830mW 8-TSSOP 2 N-Channel (Dual) Logic Level Gate 30V 3.1A 53 mOhm @ 3.4A, 10V 1V @ 250µA (Min) 16nC @ 10V -
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