- Operating Temperature :
- Package / Case :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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3,937
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Vishay Siliconix | MOSFET 2 N-CH 100V POWERPAK SO8 | Automotive, AEC-Q101, TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | 48W | PowerPAK® SO-8 Dual Asymmetric | 2 N-Channel (Dual) | Standard | 100V | 34A (Tc) | 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V, 15nC @ 10V | 1390pF @ 25V, 650pF @ 25V | ||||
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1,958
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Vishay Siliconix | MOSFET 2N-CH 40V POWERPAK 1212-8 | TrenchFET® | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 Dual | 23W | PowerPAK® 1212-8 Dual | 2 N-Channel (Dual) | Standard | 40V | 34A (Tc) | 11.71 mOhm @ 5A, 10V | 2.2V @ 250µA | 11nC @ 4.5V | 1100pF @ 20V |