Power - Max :
Transistor Type :
Current - Collector (Ic) (Max) :
Voltage - Collector Emitter Breakdown (Max) :
Vce Saturation (Max) @ Ib, Ic :
DC Current Gain (hFE) (Min) @ Ic, Vce :
Frequency - Transition :
11 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Frequency - Transition
2SA965-Y,T6KOJPF(J
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2,909
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Toshiba Semiconductor and Storage TRANS PNP 800MA 120V TO226-3 - Obsolete Bulk 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 900mW LSTM PNP 800mA 120V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 120MHz
2SA965-Y,T6F(J
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2,488
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Toshiba Semiconductor and Storage TRANS PNP 800MA 120V TO226-3 - Obsolete Bulk 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 900mW LSTM PNP 800mA 120V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 120MHz
2SA965-Y,SWFF(M
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2,582
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Toshiba Semiconductor and Storage TRANS PNP 800MA 120V TO226-3 - Obsolete Bulk 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 900mW LSTM PNP 800mA 120V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 120MHz
2SA965-Y,F(J
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RFQ
3,986
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Toshiba Semiconductor and Storage TRANS PNP 800MA 120V TO226-3 - Obsolete Bulk 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 900mW LSTM PNP 800mA 120V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 120MHz
2SA965-Y(T6CANO,FM
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RFQ
2,383
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Toshiba Semiconductor and Storage TRANS PNP 800MA 120V TO226-3 - Obsolete Bulk 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 900mW LSTM PNP 800mA 120V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 120MHz
2SA965-Y(F,M)
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RFQ
1,100
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Toshiba Semiconductor and Storage TRANS PNP 800MA 120V TO226-3 - Obsolete Bulk 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 900mW LSTM PNP 800mA 120V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 120MHz
2SA965-O,F(J
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RFQ
3,400
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Toshiba Semiconductor and Storage TRANS PNP 800MA 120V TO226-3 - Obsolete Bulk 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 900mW LSTM PNP 800mA 120V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 120MHz
2SA965-O(TE6,F,M)
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RFQ
2,709
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Toshiba Semiconductor and Storage TRANS PNP 800MA 120V TO226-3 - Obsolete Bulk 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 900mW LSTM PNP 800mA 120V 1V @ 50mA, 500mA 100nA (ICBO) 80 @ 100mA, 5V 120MHz
2SC2705-O(TPE6,F)
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RFQ
2,345
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Toshiba Semiconductor and Storage TRANS NPN 150V 0.05A TO-92MOD - Obsolete Tape & Box (TB) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 800mW LSTM NPN 50mA 150V 1V @ 1mA, 10mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz
2SC2705-O(TE6,F,M)
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RFQ
2,012
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Toshiba Semiconductor and Storage TRANS NPN 150V 0.05A TO-92MOD - Obsolete Tape & Box (TB) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 800mW LSTM NPN 50mA 150V 1V @ 1mA, 10mA 100nA (ICBO) 80 @ 10mA, 5V 200MHz
2SC2705-Y(TE6,F,M)
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RFQ
3,331
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Toshiba Semiconductor and Storage TRANS NPN 150V 0.05A TO-92 - Obsolete Tape & Box (TB) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body 800mW LSTM NPN 50mA 150V 1V @ 1mA, 10mA 100nA (ICBO) 120 @ 10mA, 5V 200MHz
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