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17 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,157
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A VSON-4 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz | |||
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2,606
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO263-2 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 1.7mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
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1,816
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 10A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | |||
|
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2,666
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 10A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | |||
|
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2,302
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 10A D2PAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | |||
|
GET PRICE |
1,755
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
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1,408
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
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909
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Bulk | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 340µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
|
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3,874
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|
Infineon Technologies | DIODE SCHOTTKY 600V 6A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | |||
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2,363
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||||
|
764
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO263-2 | thinQ!™ | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | - | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||||
|
2,889
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz | ||||
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1,781
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Infineon Technologies | DIODE SCHOTKY 650V 10A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||||
|
2,000
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|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 180µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||||
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3,309
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | ||||
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1,748
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Rohm Semiconductor | DIODE SC SCHKY 650V 6A TO220ACP | - | Active | Tube | Through Hole | TO-220-2 | - | Silicon Carbide Schottky | 6A | 1.5V @ 6A | 30µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | ||||
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3,342
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Microsemi Corporation | DIODE SILICON 650V 17A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 17A | 1.8V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 300pF @ 1V, 1MHz |