- Manufacture :
- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
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5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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625
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
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1,476
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
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983
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Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 24.5A TO252 | Z-Rec® | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 24.5A (DC) | 1.8V @ 8A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
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1,164
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Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 8A TO220-2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 24.5A (DC) | 1.8V @ 7.5A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
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2,988
Ships today + free overnight shipping
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Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 8A TO252-2 | Z-Rec® | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 24.5A (DC) | 3V @ 2A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz |
