- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
12 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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625
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | ||||
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893
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | ||||
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1,541
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | ||||
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1,874
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 33A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 690pF @ 0V, 1MHz | ||||
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1,476
Ships today + free overnight shipping
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | ||||
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3,242
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 25.5A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | ||||
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1,155
Ships today + free overnight shipping
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 430pF @ 0V, 1MHz | ||||
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3,301
Ships today + free overnight shipping
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 430pF @ 0V, 1MHz | ||||
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1,732
Ships today + free overnight shipping
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 21.5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 424pF @ 0V, 1MHz | ||||
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2,268
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 0V, 1MHz | ||||
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1,559
Ships today + free overnight shipping
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 0V, 1MHz | ||||
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2,695
Ships today + free overnight shipping
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 11A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 181pF @ 0V, 1MHz |