- Part Status :
- Mounting Type :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,715
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Infineon Technologies | DIODE SILICON 300V 10A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 1V, 1MHz | ||
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3,788
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
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893
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | |||
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1,541
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | |||
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1,908
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Central Semiconductor Corp | DIODE SCHOTTKY 650V 10A DPAK | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 125µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 325pF @ 1V, 1MHz | |||
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947
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
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2,689
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ON Semiconductor | 650V 10A SIC SBD | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Silicon Carbide Schottky | 10A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | |||
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1,334
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 612pF @ 1V, 100kHz |
