- Manufacture :
- Series :
- Part Status :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
14 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,311
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Microsemi Corporation | DIODE SCHOTTKY 1700V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 23A (DC) | 1.8V @ 10A | 200µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1120pF @ 0V, 1MHz | ||
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1,098
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Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | ||
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GET PRICE |
1,653
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Microsemi Corporation | DIODE GEN PURP 300V 60A TO247 | - | Obsolete | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 60A | 1.4V @ 60A | 250µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 38ns | -55°C ~ 175°C | - | ||
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1,725
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IXYS | DIODE GEN PURP 400V 60A TO247 | HiPerFRED™ | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 60A | 1.47V @ 60A | 1µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | - | |||
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1,599
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IXYS | DIODE GEN PURP 300V 60A TO247 | HiPerFRED™ | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 60A | 1.4V @ 60A | 1µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
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3,760
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IXYS | DIODE GEN PURP 1800V 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 1.25V @ 30A | 40µA @ 1800V | 1800V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 175°C | 10pF @ 400V, 1MHz | |||
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1,026
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IXYS | DIODE GEN PURP 400V 30A TO247 | HiPerFRED²™ | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 1.41V @ 30A | 1µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | 32pF @ 200V, 1MHz | |||
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3,993
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IXYS | DIODE GEN PURP 300V 30A TO247 | HiPerFRED™ | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 1.34V @ 30A | 1µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 175°C | - | |||
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3,878
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Microsemi Corporation | DIODE GEN PURP 600V 100A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 100A | 1.6V @ 100A | - | 600V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 175°C | - | |||
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2,604
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Microsemi Corporation | DIODE GEN PURP 600V 15A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 15A | 1.8V @ 15A | 150µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 80ns | -55°C ~ 175°C | - | |||
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1,643
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Microsemi Corporation | DIODE GEN PURP 1.2KV 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 2.5V @ 30A | 250µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 370ns | -55°C ~ 175°C | - | |||
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2,911
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 43A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 104pF @ 400V, 1MHz | |||
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652
Ships today + free overnight shipping
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Microsemi Corporation | DIODE GEN PURP 1KV 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 2.3V @ 30A | 250µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 290ns | -55°C ~ 175°C | - | |||
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2,172
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ON Semiconductor | DIODE GEN PURP 600V 50A TO247 | Stealth™ | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 50A | 1.54V @ 50A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 124ns | -55°C ~ 175°C | - |
