- Series :
- Part Status :
- Packaging :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
13 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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2,893
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Micro Commercial Co | DIODE GPP SUPER FAST 2A DO-15 | - | Obsolete | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Standard | 2A | 950mV @ 40V | - | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 125°C | 60pF @ 4V, 1MHz | |||
|
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1,453
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|
Micro Commercial Co | DIODE GPP SUPER FAST 2A DO-15 | - | Obsolete | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | Standard | 2A | 950mV @ 40V | - | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 125°C | 60pF @ 4V, 1MHz | |||
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682
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
|
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976
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Diodes Incorporated | DIODE GEN PURP 50V 3A DO201AD | - | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -65°C ~ 150°C | 60pF @ 4V, 1MHz | |||
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3,084
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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2,427
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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3,594
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SMC Diode Solutions | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
|
1,028
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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707
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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1,730
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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3,636
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Reel (TR) | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
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876
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Bulk | Through Hole | R6, Axial | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
|
800
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A R-6 | - | Active | Tape & Box (TB) | Through Hole | - | R-6 | Standard | 6A | 1.1V @ 6A | 10µA @ 50V | 50V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 60pF @ 4V, 1MHz |