6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
FES16ATHE3/45
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RFQ
3,473
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Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 16A TO220AC - Obsolete Tube Through Hole TO-220-2 TO-220AC Standard 16A 975mV @ 16A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 150°C -
FESF16AT-E3/45
Per Unit
$0.91
RFQ
3,549
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Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 16A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack, Isolated Tab ITO-220AC Standard 16A 975mV @ 16A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 150°C -
FESF16ATHE3/45
Per Unit
$0.93
RFQ
2,251
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 16A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack, Isolated Tab ITO-220AC Standard 16A 975mV @ 16A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 150°C -
SFAF1601G C0G
Per Unit
$0.54
RFQ
1,111
Ships today + free overnight shipping
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A ITO220AC - Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 16A 975mV @ 16A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 130pF @ 4V, 1MHz
FES16AT-E3/45
Per Unit
$0.50
RFQ
2,539
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 16A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 16A 975mV @ 16A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -65°C ~ 150°C -
SFAF1601GHC0G
Per Unit
$0.34
RFQ
3,408
Ships today + free overnight shipping
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A ITO220AC Automotive, AEC-Q101 Active Tube Through Hole TO-220-2 Full Pack ITO-220AC Standard 16A 975mV @ 16A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 130pF @ 4V, 1MHz
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