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6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,473
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 16A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 16A | 975mV @ 16A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 150°C | - | |||
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3,549
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 16A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Standard | 16A | 975mV @ 16A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 150°C | - | ||||
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2,251
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 16A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | Standard | 16A | 975mV @ 16A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 150°C | - | ||||
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1,111
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 16A ITO220AC | - | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 16A | 975mV @ 16A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 130pF @ 4V, 1MHz | ||||
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2,539
Ships today + free overnight shipping
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 16A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 16A | 975mV @ 16A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 150°C | - | ||||
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3,408
Ships today + free overnight shipping
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 16A ITO220AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-220-2 Full Pack | ITO-220AC | Standard | 16A | 975mV @ 16A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 130pF @ 4V, 1MHz |