- Manufacture :
- Part Status :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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2,258
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Infineon Technologies | DIODE SCHOTTKY 650V 16A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 550µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | ||
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3,572
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ON Semiconductor | DIODE SCHOTTKY 650V 16A TO220-2 | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 16A (DC) | 1.75V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 887pF @ 1V, 100kHz | |||
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2,532
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Infineon Technologies | DIODE SCHOTKY 650V 16A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | |||
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3,889
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Infineon Technologies | DIODE SCHOTTKY 650V 16A TO220-2 | - | Active | - | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 16A (DC) | 1.35V @ 6A | 20µA @ 420V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 302pF @ 1V, 1MHz |
