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2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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1,408
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Infineon Technologies | DIODE SCHOTTKY 650V 10A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||
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3,362
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Microsemi Corporation | DIODE SILICON 650V 32A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 32A | 1.8V @ 20A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 680pF @ 100mV, 1MHz |
