6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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Per Unit
$22.68
RFQ
1,494
Ships today + free overnight shipping
Microsemi Corporation DIODE GEN PURP 880V 1.4A D5B Military, MIL-PRF-19500/590 Active Bulk Surface Mount SQ-MELF, E D-5B Standard 1.4A 1.4V @ 1.4A 2µA @ 880V 880V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 40pF @ 10V, 1MHz
JANTX1N6629
Per Unit
$21.12
RFQ
2,597
Ships today + free overnight shipping
Microsemi Corporation DIODE GEN PURP 880V 1.4A Military, MIL-PRF-19500/590 Active Bulk Through Hole E, Axial - Standard 1.4A 1.4V @ 1.4A 2µA @ 880V 880V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 40pF @ 10V, 1MHz
JAN1N6629US
Per Unit
$19.23
RFQ
2,032
Ships today + free overnight shipping
Microsemi Corporation DIODE GEN PURP 880V 1.4A D5B Military, MIL-PRF-19500/590 Active Bulk Surface Mount SQ-MELF, E D-5B Standard 1.4A 1.4V @ 1.4A 2µA @ 880V 880V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 40pF @ 10V, 1MHz
1N6629
Per Unit
$9.96
RFQ
3,767
Ships today + free overnight shipping
Microsemi Corporation DIODE GEN PURP 880V 1.4A AXIAL - Active Bulk Through Hole A, Axial - Standard 1.4A 1.4V @ 1.4A 2µA @ 880V 880V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 40pF @ 10V, 1MHz
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RFQ
2,563
Ships today + free overnight shipping
Microsemi Corporation DIODE GEN PURP 880V 1.4A A-MELF - Discontinued at Digi-Key Bulk Surface Mount SQ-MELF, A A-MELF Standard 1.4A 1.4V @ 1.4A 2µA @ 880V 880V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 40pF @ 10V, 1MHz
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RFQ
1,223
Ships today + free overnight shipping
Microsemi Corporation DIODE GEN PURP 880V 1.4A AXIAL Military, MIL-PRF-19500/590 Discontinued at Digi-Key Bulk Through Hole E, Axial - Standard 1.4A 1.4V @ 1.4A 2µA @ 880V 880V Fast Recovery = 200mA (Io) 50ns -65°C ~ 150°C 40pF @ 10V, 1MHz
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