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6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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2,318
Ships today + free overnight shipping
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1.4A D5B | Military, MIL-PRF-19500/590 | Discontinued at Digi-Key | Bulk | Through Hole | E, Axial | E-PAK | Standard | 1.4A | 1.6V @ 1.4A | 4µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 40pF @ 10V, 1MHz | ||
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3,063
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1.4A D5B | Military, MIL-PRF-19500/590 | Active | Bulk | Surface Mount | E-MELF | D-5B | Standard | 1.4A | 1.6V @ 1.4A | 4µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 40pF @ 10V, 1MHz | |||
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2,579
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1.4A D5B | Military, MIL-PRF-19500/590 | Active | Bulk | Surface Mount | SQ-MELF, E | D-5B | Standard | 1.4A | 1.6V @ 1.4A | 4µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 40pF @ 10V, 1MHz | |||
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910
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1.4A D5B | Military, MIL-PRF-19500/590 | Active | Bulk | Surface Mount | SQ-MELF, B | D-5B | Standard | 1.4A | 1.6V @ 1.4A | 4µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 40pF @ 10V, 1MHz | |||
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GET PRICE |
757
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1.4A AXIAL | - | Discontinued at Digi-Key | Bulk | Through Hole | A, Axial | - | Standard | 1.4A | 1.4V @ 1.4A | 4µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 40pF @ 10V, 1MHz | ||
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3,783
Ships today + free overnight shipping
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Microsemi Corporation | DIODE GEN PURP 1.1KV 1.4A A-MELF | - | Active | Bulk | Surface Mount | SQ-MELF, A | A-MELF | Standard | 1.4A | 1.4V @ 1.4A | 4µA @ 1100V | 1100V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 150°C | 40pF @ 10V, 1MHz |
