- Series :
- Part Status :
- Mounting Type :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 1054pF @ 1V, 1MHz (1)
- 1085pF @ 1V, 100kHz (3)
- 158pF @ 1V, 1MHz (1)
- 1705pF @ 1V, 100kHz (2)
- 179pF @ 1V, 1MHz (1)
- 190pF @ 1V, 1MHz (4)
- 1989pF @ 1V, 100kHz (1)
- 2530pF @ 1V, 100kHz (1)
- 300pF @ 1V, 1MHz (1)
- 361pF @ 1V, 100kHz (1)
- 463pF @ 1V, 100kHz (2)
- 470pF @ 1V, 1MHz (3)
- 575pF @ 1V, 100kHz (6)
- 632pF @ 1V, 1MHz (3)
- 665pF @ 1V, 100kHz (1)
- 887pF @ 1V, 100kHz (3)
- Applied Filters :
34 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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|
GET PRICE |
2,518
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WeEn Semiconductors | DIODE SCHOTTKY 650V 6A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 6A | 1.7V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 190pF @ 1V, 1MHz | |||
|
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3,446
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 6A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 6A | 1.7V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 190pF @ 1V, 1MHz | |||
|
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3,394
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 6A D2PAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Silicon Carbide Schottky | 6A | 1.7V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 190pF @ 1V, 1MHz | |||
|
1,642
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|
Infineon Technologies | DIODE SCHOTTKY 650V 16A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | ||||
|
3,216
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|
ON Semiconductor | 650V 16A SIC SBD | - | Active | - | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 11A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 463pF @ 1V, 100kHz | ||||
|
1,295
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|
Global Power Technologies Group | DIODE SCHOTTKY 650V 58A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 58A (DC) | 1.65V @ 20A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | 1054pF @ 1V, 1MHz | ||||
|
2,396
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|
ON Semiconductor | 650V 20A SIC SBD | - | Active | - | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 13A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | ||||
|
3,203
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|
ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 15A (DC) | 1.75V @ 12A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 665pF @ 1V, 100kHz | ||||
|
1,457
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|
ON Semiconductor | DIODE SCHOTTKY 650V 15A TO220-2 | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 15A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | ||||
|
3,035
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|
ON Semiconductor | DIODE SCHOTTKY 650V 13A TO220-2 | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 13A (DC) | 1.75V @ 8A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 463pF @ 1V, 100kHz | ||||
|
2,896
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|
ON Semiconductor | DIODE SCHOTTKY 650V TO220-2 | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8.8A (DC) | 1.75V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 361pF @ 1V, 100kHz | ||||
|
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1,266
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|
ON Semiconductor | 650V 10A SIC SBD | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | |||
|
2,176
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|
ON Semiconductor | 650V 10A SIC SBD | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | ||||
|
2,854
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|
ON Semiconductor | 650V 10A SIC SBD | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.75V @ 10A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | ||||
|
2,653
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|
ON Semiconductor | 650V 30A SIC SBD | - | Active | - | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 23A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 887pF @ 1V, 100kHz | ||||
|
3,440
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|
ON Semiconductor | 650V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 60A (DC) | 1.75V @ 50A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2530pF @ 1V, 100kHz | ||||
|
1,854
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|
ON Semiconductor | 650V 40A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 48A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1989pF @ 1V, 100kHz | ||||
|
3,408
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|
ON Semiconductor | 650V 30A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1705pF @ 1V, 100kHz | ||||
|
3,576
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|
ON Semiconductor | 650V 20A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 25A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | ||||
|
3,433
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|
ON Semiconductor | 650V 20A SIC SBD | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Silicon Carbide Schottky | 20A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | ||||
|
3,665
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|
ON Semiconductor | 650V 16A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 23A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 887pF @ 1V, 100kHz | ||||
|
3,731
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|
ON Semiconductor | DIODE SCHOTTKY 650V 25A TO220-2 | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 25A (DC) | 1.75V @ 20A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1085pF @ 1V, 100kHz | ||||
|
3,572
Ships today + free overnight shipping
|
ON Semiconductor | DIODE SCHOTTKY 650V 16A TO220-2 | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 16A (DC) | 1.75V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 887pF @ 1V, 100kHz | ||||
|
2,689
Ships today + free overnight shipping
|
ON Semiconductor | 650V 10A SIC SBD | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | Silicon Carbide Schottky | 10A (DC) | - | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 575pF @ 1V, 100kHz | ||||
|
2,532
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|
Infineon Technologies | DIODE SCHOTKY 650V 16A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | ||||
|
1,372
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|
ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 30A | 200µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 1705pF @ 1V, 100kHz | ||||
|
1,929
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|
Infineon Technologies | DIODE SCHOTTKY 650V 16A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 16A (DC) | 1.7V @ 16A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 470pF @ 1V, 1MHz | ||||
|
1,004
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|
Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 6A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 179pF @ 1V, 1MHz | ||||
|
3,529
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 6A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 6A | 1.7V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 190pF @ 1V, 1MHz | ||||
|
1,918
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|
Global Power Technologies Group | DIODE SCHOTTKY 650V 3A TO252-2 | Amp+™ | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | Silicon Carbide Schottky | 3A | 1.65V @ 3A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 158pF @ 1V, 1MHz |