- Series :
- Part Status :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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2,827
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 8A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 44pF @ 650V, 1MHz | |||
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962
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 6A TO220-2L | - | Not For New Designs | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 6A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 35pF @ 650V, 1MHz | |||
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1,834
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Infineon Technologies | DIODE SCHOTTKY 650V 5A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 160pF @ 1V, 1MHz | |||
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1,967
Ships today + free overnight shipping
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 10A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | - |
