- Packaging :
- Package / Case :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
5 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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708
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | - | ||||
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3,698
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 9.4A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 28pF @ 4V, 1MHz | ||||
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3,035
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1.5A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1.5A | 1.4V @ 1.5A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 15pF @ 4V, 1MHz | ||||
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2,191
Ships today + free overnight shipping
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1.5A DO204AL | - | Active | Cut Tape (CT) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1.5A | 1.4V @ 1.5A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 15pF @ 4V, 1MHz | ||||
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1,259
Ships today + free overnight shipping
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1.5A DO204AL | - | Active | Tape & Reel (TR) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1.5A | 1.4V @ 1.5A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 2µs | -50°C ~ 150°C | 15pF @ 4V, 1MHz |