- Part Status :
- Packaging :
- Mounting Type :
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6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GET PRICE |
3,827
Ships today + free overnight shipping
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Microsemi Corporation | UFR,FRR | - | Active | Tape & Reel (TR) | Surface Mount | SQ-MELF, E | D-5B | Standard | 2.3A | 1.5V @ 4A | 2µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -65°C ~ 150°C | 40pF @ 10V, 1MHz | ||
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GET PRICE |
3,621
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ON Semiconductor | DIODE GEN PURP 1.5KV 4A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | TO-220F-2L | Standard | 4A | 1.5V @ 4A | 5µA @ 1500V | 1500V | Fast Recovery = 200mA (Io) | 170ns | -65°C ~ 150°C | - | ||
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790
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ON Semiconductor | DIODE GEN PURP 600V 4A TO252 | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | Standard | 4A | 1.5V @ 4A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 175°C | 15pF @ 10V, 1MHz | ||
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1,807
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ON Semiconductor | DIODE GEN PURP 600V 4A TO252 | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | Standard | 4A | 1.5V @ 4A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 175°C | 15pF @ 10V, 1MHz | |||
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2,912
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ON Semiconductor | DIODE GEN PURP 600V 4A TO252 | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | Standard | 4A | 1.5V @ 4A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | -65°C ~ 175°C | 15pF @ 10V, 1MHz | |||
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758
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Rohm Semiconductor | DIODE SCHOTTKY 650V 4A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | - | Silicon Carbide Schottky | 4A (DC) | 1.5V @ 4A | 20µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 200pF @ 1V, 1MHz |
