- Series :
- Part Status :
- Mounting Type :
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12 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,255
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|
Infineon Technologies | DIODE SCHOTTKY 650V 3A TO263-2 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-262 | PG-TO263-2 | Silicon Carbide Schottky | 3A (DC) | 1.8V @ 3A | 500µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 100pF @ 1V, 1MHz | |||
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1,697
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A P600 | - | Obsolete | Tape & Box (TB) | Through Hole | P600, Axial | P600 | Standard | 3A | 1.8V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | - | |||
|
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1,253
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|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A P600 | - | Obsolete | Tape & Reel (TR) | Through Hole | P600, Axial | P600 | Standard | 3A | 1.8V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | - | |||
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3,222
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Toshiba Semiconductor and Storage | DIODE GEN PURP 400V 3A M-FLAT | - | Active | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | Standard | 3A | 1.8V @ 3A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 100ns | -40°C ~ 150°C | - | ||||
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3,882
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Infineon Technologies | DIODE SCHOTTKY 650V 3A TO263-2 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 3A (DC) | 1.8V @ 3A | 500µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 100pF @ 1V, 1MHz | ||||
|
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1,068
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Sanken | DIODE GEN PURP 1.3KV 1.5A AXIAL | - | Obsolete | Bulk | Through Hole | Axial | - | Standard | 1.5A | 1.8V @ 3A | 10µA @ 1300V | 1300V | Fast Recovery = 200mA (Io) | 400ns | -40°C ~ 150°C | - | |||
|
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3,890
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STMicroelectronics | DIODE GEN PURP 1.2KV 3A DPAK | TURBOSWITCH™ | Obsolete | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Standard | 3A | 1.8V @ 3A | 20µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 115ns | 125°C (Max) | - | |||
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1,300
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Cree/Wolfspeed | DIODE SCHOTTKY 650V 11.5A TO252 | Z-Rec® | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Schottky | 11A (DC) | 1.8V @ 3A | 50µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 155pF @ 0V, 1MHz | ||||
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3,629
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Diodes Incorporated | DIODE GEN PURP 1KV 3A SMC | - | Active | Digi-Reel® | Surface Mount | DO-214AB, SMC | SMC | Standard | 3A | 1.8V @ 3A | 10µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 85ns | -65°C ~ 175°C | 25pF @ 4V, 1MHz | |||
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3,364
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Diodes Incorporated | DIODE GEN PURP 1KV 3A SMC | - | Active | Cut Tape (CT) | Surface Mount | DO-214AB, SMC | SMC | Standard | 3A | 1.8V @ 3A | 10µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 85ns | -65°C ~ 175°C | 25pF @ 4V, 1MHz | ||||
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3,517
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Diodes Incorporated | DIODE GEN PURP 1KV 3A SMC | - | Active | Tape & Reel (TR) | Surface Mount | DO-214AB, SMC | SMC | Standard | 3A | 1.8V @ 3A | 10µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 85ns | -65°C ~ 175°C | 25pF @ 4V, 1MHz | ||||
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2,965
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Cree/Wolfspeed | DIODE SCHOTTKY 650V 3A TO252-2 | Z-Rec® | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 11A (DC) | 1.8V @ 3A | 50µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 155pF @ 0V, 1MHz |