- Part Status :
- Mounting Type :
- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
26 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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2,116
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|
Infineon Technologies | DIODE SCHOTTKY 650V 4A VSON-4 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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2,449
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
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2,011
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
|
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1,404
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|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A D2PAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
|
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1,467
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|
Infineon Technologies | DIODE SCHOTTKY 650V 4A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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2,602
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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863
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | Automotive, AEC-Q101 | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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2,222
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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2,783
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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1,620
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
|
3,933
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
|
823
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|
Infineon Technologies | DIODE SCHOTTKY 650V 4A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||||
|
3,917
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|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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3,548
Ships today + free overnight shipping
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | - | Active | Bulk | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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1,152
Ships today + free overnight shipping
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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2,254
Ships today + free overnight shipping
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
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2,838
Ships today + free overnight shipping
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
|
2,008
Ships today + free overnight shipping
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
|
1,413
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Cree/Wolfspeed | DIODE SCHOTTKY 600V 4A TO220-F2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220-F2 | Silicon Carbide Schottky | 6A (DC) | 1.7V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 251pF @ 0V, 1MHz | ||||
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3,232
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Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 4A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 125pF @ 1V, 1MHz | ||||
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3,498
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|
STMicroelectronics | DIODE GEN PURP 600V 4A POWERFLAT | - | Active | Digi-Reel® | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | Standard | 4A | 1.7V @ 4A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | 150°C (Max) | - | |||
|
778
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STMicroelectronics | DIODE GEN PURP 600V 4A POWERFLAT | - | Active | Cut Tape (CT) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | Standard | 4A | 1.7V @ 4A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | 150°C (Max) | - | ||||
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1,273
Ships today + free overnight shipping
|
STMicroelectronics | DIODE GEN PURP 600V 4A POWERFLAT | - | Active | Tape & Reel (TR) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | Standard | 4A | 1.7V @ 4A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | 150°C (Max) | - | ||||
|
727
Ships today + free overnight shipping
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | ||||
|
1,550
Ships today + free overnight shipping
|
Infineon Technologies | DIODE SCHOTTKY 650V 4A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | ||||
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3,037
Ships today + free overnight shipping
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 4A TO252-2 | Z-Rec® | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 13.5A (DC) | 1.7V @ 4A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 251pF @ 0V, 1MHz |