6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK MANUFACTURE DESCRIPTION Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
MR752RLG
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RFQ
1,845
Ships today + free overnight shipping
ON Semiconductor DIODE GP 200V 6A MICRODE BUTTON - Obsolete Cut Tape (CT) Through Hole Button, Axial Microde Button Standard 6A 900mV @ 6A 25µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
MR752RL
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RFQ
2,745
Ships today + free overnight shipping
ON Semiconductor DIODE GP 200V 6A MICRODE BUTTON - Obsolete Cut Tape (CT) Through Hole Button, Axial Microde Button Standard 6A 900mV @ 6A 25µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
GI752-E3/54
Per Unit
$0.64
RFQ
1,688
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A P600 - Active Cut Tape (CT) Through Hole P600, Axial P600 Standard 6A 900mV @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2.5µs -50°C ~ 150°C 150pF @ 4V, 1MHz
6A2-T
Per Unit
$0.42
RFQ
3,967
Ships today + free overnight shipping
Diodes Incorporated DIODE GEN PURP 200V 6A R6 - Active Cut Tape (CT) Through Hole R6, Axial R-6 Standard 6A 900mV @ 6A 10µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) - -65°C ~ 175°C -
P600D-E3/73
Per Unit
$0.64
RFQ
2,516
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A P600 - Active Cut Tape (CT) Through Hole P600, Axial P600 Standard 6A 900mV @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2.5µs -50°C ~ 150°C 150pF @ 4V, 1MHz
P600D-E3/54
Per Unit
$0.64
RFQ
3,868
Ships today + free overnight shipping
Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 6A P600 - Active Cut Tape (CT) Through Hole P600, Axial P600 Standard 6A 900mV @ 6A 5µA @ 200V 200V Standard Recovery >500ns, > 200mA (Io) 2.5µs -50°C ~ 150°C 150pF @ 4V, 1MHz
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