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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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GET PRICE |
3,579
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Infineon Technologies | DIODE GEN PURP 1.7KV 50A WAFER | - | Discontinued at Digi-Key | Bulk | Surface Mount | Die | Sawn on foil | Standard | 50A (DC) | 1.8V @ 50A | 27µA @ 1700V | 1700V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | - | ||
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2,525
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
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2,241
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 50A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 50A (DC) | 1.8V @ 50A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 3174pF @ 1V, 1MHz | |||
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3,743
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Cree/Wolfspeed | DIODE SCHOTTKY 650V 100A TO247-3 | Z-Rec® | Active | Bulk | Through Hole | TO-247-3 | TO-247-3 | Silicon Carbide Schottky | 100A (DC) | 1.8V @ 50A | 500µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1970pF @ 0V, 1MHz |
