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15 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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2,256
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Renesas Electronics America | DIODE GP 430V 20A TO220FP-2L | - | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | Standard | 20A | 1.8V @ 20A | 1µA @ 430V | 430V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
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3,028
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Renesas Electronics America | DIODE GEN PURP 430V 20A LDPAK | - | Active | Tape & Reel (TR) | Surface Mount | SC-83 | 4-LDPAK | Standard | 20A | 1.8V @ 20A | 1µA @ 430V | 430V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
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3,646
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Renesas Electronics America | DIODE GEN PURP 430V 20A TO252 | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Standard | 20A | 1.8V @ 20A | 1µA @ 430V | 430V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
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2,103
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 68A | - | Obsolete | - | - | - | - | Silicon Carbide Schottky | 68A (DC) | 1.8V @ 20A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 1135pF @ 0V, 1MHz | |||
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3,173
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 68A D3PAK | - | Obsolete | Tube | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | Silicon Carbide Schottky | 68A (DC) | 1.8V @ 20A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 1135pF @ 0V, 1MHz | |||
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3,362
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Microsemi Corporation | DIODE SILICON 650V 32A TO220 | - | Obsolete | Bulk | Through Hole | TO-220-2 | TO-220 [K] | Silicon Carbide Schottky | 32A | 1.8V @ 20A | 400µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 680pF @ 100mV, 1MHz | |||
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3,297
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NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.8V @ 20A | 100µA @ 1300V | 1500V | Standard Recovery >500ns, > 200mA (Io) | 600ns | 150°C (Max) | - | |||
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1,221
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NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A (DC) | 1.8V @ 20A | 100µA @ 1300V | 1500V | Standard Recovery >500ns, > 200mA (Io) | 600ns | 150°C (Max) | - | |||
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1,822
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Littelfuse Inc. | DIODE SIC SCHOTTKY 1200V 20A | Gen2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 54.5A (DC) | 1.8V @ 20A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1142pF @ 1V, 1MHz | ||||
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3,622
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Cree/Wolfspeed | ZRECTM 20A 1200V SIC SCHOTTKY DI | Z-Rec® | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 54A (DC) | 1.8V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1.5nF @ 0V, 1MHz | ||||
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2,911
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Microsemi Corporation | DIODE SCHOTTKY 1.2KV 43A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 104pF @ 400V, 1MHz | ||||
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2,804
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 20A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 20A (DC) | 1.8V @ 20A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1270pF @ 1V, 1MHz | ||||
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1,804
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 20A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 20A (DC) | 1.8V @ 20A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1270pF @ 1V, 1MHz | ||||
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1,054
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Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 20A TO220-2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 54.5A (DC) | 1.8V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1500pF @ 0V, 1MHz | ||||
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3,195
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Infineon Technologies | DIODE SCHOTTKY 1.2KV 56A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 56A (DC) | 1.8V @ 20A | 123µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1050pF @ 1V, 1MHz |