- Package / Case :
- Supplier Device Package :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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3,309
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Microsemi Corporation | DIODE GEN PURP 600V 30A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220 [K] | Standard | 30A | 2.4V @ 30A | 25µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 175°C | - | |||
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1,147
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ON Semiconductor | DIODE GEN PURP 600V 30A TO247-2 | Automotive, AEC-Q101, Stealth™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 30A | 2.4V @ 30A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | - | |||
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1,415
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STMicroelectronics | DIODE GEN PURP 600V 30A TO247-2 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 30A | 2.4V @ 30A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | 175°C (Max) | - | |||
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2,141
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Microsemi Corporation | DIODE GEN PURP 600V 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 30A | 2.4V @ 30A | 25µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 175°C | - | |||
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2,466
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ON Semiconductor | DIODE GEN PURP 600V 30A TO247 | Stealth™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Standard | 30A | 2.4V @ 30A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | - | |||
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3,302
Ships today + free overnight shipping
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ON Semiconductor | DIODE GEN PURP 600V 30A TO220AC | Stealth™ | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 30A | 2.4V @ 30A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 45ns | -55°C ~ 175°C | - |
